| Автор | V B Gera |
| Автор | R Gupta |
| Автор | K P Jain |
| Дата выпуска | 1989-07-30 |
| dc.description | Electronic band structures of the ternary alloys Ga<sub>x</sub>In<sub>1-x</sub>P, GaAs<sub>1-x</sub>P<sub>x</sub>, Ga<sub>x</sub>In<sub>1-x</sub>As and InAs<sub>1-x</sub>P<sub>x</sub> are calculated in the coherent-potential approximation (CPA) using the tight-binding Hamiltonian. The CPA energy bands are reported for the first time for the Ga<sub>x</sub>In<sub>1-x</sub>As and InAs<sub>1-x</sub>P<sub>x</sub> systems. The calculated variation of important direct and indirect energy gaps with composition x and their bowing is compared with the available experimental data, and good agreement is found for all the four ternary alloys studied. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electronic structure of III-V ternary semiconductors |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/30/005 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 4913 |
| Последняя страница | 4930 |
| Аффилиация | V B Gera; Laser Technol. Res. Programme, Indian Inst. of Technol., New Delhi, India |
| Аффилиация | R Gupta; Laser Technol. Res. Programme, Indian Inst. of Technol., New Delhi, India |
| Аффилиация | K P Jain; Laser Technol. Res. Programme, Indian Inst. of Technol., New Delhi, India |
| Выпуск | 30 |
