The first stages of oxidation of a-Si: a study of the Si L<sub>2,3</sub> VV Auger lineshape
R Vidal; M C G Passeggi; R Vidal; Inst. de Desarrollo Technologico para la Ind. Quimica, Santa Fe, Argentina; M C G Passeggi; Inst. de Desarrollo Technologico para la Ind. Quimica, Santa Fe, Argentina
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-08-21
Аннотация:
The authors report an independent-electron model calculation of the L<sub>2,3</sub> VV Auger lineshape for the ideal Si(100) surface with oxygen impurities incorporated at different positions with respect to the surface. The L<sub>2,3</sub> VV Auger lineshape is compared with experimental spectra measured during the first stages of oxidation of a-Si. The Auger lineshape obtained for an oxygen monolayer over the Si(100) surface in a bridging configuration compares well with experimental spectra.
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