| Автор | R Vidal |
| Автор | M C G Passeggi |
| Дата выпуска | 1989-08-21 |
| dc.description | The authors report an independent-electron model calculation of the L<sub>2,3</sub> VV Auger lineshape for the ideal Si(100) surface with oxygen impurities incorporated at different positions with respect to the surface. The L<sub>2,3</sub> VV Auger lineshape is compared with experimental spectra measured during the first stages of oxidation of a-Si. The Auger lineshape obtained for an oxygen monolayer over the Si(100) surface in a bridging configuration compares well with experimental spectra. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The first stages of oxidation of a-Si: a study of the Si L<sub>2,3</sub> VV Auger lineshape |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/33/023 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 5783 |
| Последняя страница | 5792 |
| Аффилиация | R Vidal; Inst. de Desarrollo Technologico para la Ind. Quimica, Santa Fe, Argentina |
| Аффилиация | M C G Passeggi; Inst. de Desarrollo Technologico para la Ind. Quimica, Santa Fe, Argentina |
| Выпуск | 33 |
