Phonon scattering studies of Ni and V centres in GaP and InP
M Sahraoui-Tahar; B Salce; L J Challis; N Butler; W Ulrici; B Cockayne; M Sahraoui-Tahar; Dept. of Phys., Nottingham Univ., UK; B Salce; Dept. of Phys., Nottingham Univ., UK; L J Challis; Dept. of Phys., Nottingham Univ., UK; N Butler; Dept. of Phys., Nottingham Univ., UK; W Ulrici; Dept. of Phys., Nottingham Univ., UK; B Cockayne; Dept. of Phys., Nottingham Univ., UK
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-11-27
Аннотация:
Thermal conductivity measurements have been made from 50 mK to 100 K of GaP and InP samples doped with Ni or V. The GaP samples both show strong resonant phonon scattering at 500 and 380 GHz respectively which is attributed to the T<sub>1</sub>-T<sub>2</sub> tunnelling splitting associated with a dynamic orthorhombic Jahn-Teller distortion of the T<sub>1</sub> orbital ground state of Ni<sup>2+</sup> and V<sup>2+</sup>. Low-frequency scattering in both systems is tentatively attributed to these same ions in complex with a defect. The assignment of the scattering to V<sup>2+</sup> is supported by studies of photo-induced changes in the V<sup>2+</sup> concentration. Uniaxial stress measurements on GaP:V suggest strong coupling to E modes but the strength of the coupling to T<sub>2</sub> modes is less clear. The absence of resonance scattering in a n-type sample of InP:Ni suggests the Ni is all in the Ni<sup>+</sup> state (<sup>2</sup>T<sub>2</sub>) as expected and the absence of scattering in n-type InP:V is consistent with the instability of V<sup>2+</sup> in that system.
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