Автор |
M Sahraoui-Tahar |
Автор |
B Salce |
Автор |
L J Challis |
Автор |
N Butler |
Автор |
W Ulrici |
Автор |
B Cockayne |
Дата выпуска |
1989-11-27 |
dc.description |
Thermal conductivity measurements have been made from 50 mK to 100 K of GaP and InP samples doped with Ni or V. The GaP samples both show strong resonant phonon scattering at 500 and 380 GHz respectively which is attributed to the T<sub>1</sub>-T<sub>2</sub> tunnelling splitting associated with a dynamic orthorhombic Jahn-Teller distortion of the T<sub>1</sub> orbital ground state of Ni<sup>2+</sup> and V<sup>2+</sup>. Low-frequency scattering in both systems is tentatively attributed to these same ions in complex with a defect. The assignment of the scattering to V<sup>2+</sup> is supported by studies of photo-induced changes in the V<sup>2+</sup> concentration. Uniaxial stress measurements on GaP:V suggest strong coupling to E modes but the strength of the coupling to T<sub>2</sub> modes is less clear. The absence of resonance scattering in a n-type sample of InP:Ni suggests the Ni is all in the Ni<sup>+</sup> state (<sup>2</sup>T<sub>2</sub>) as expected and the absence of scattering in n-type InP:V is consistent with the instability of V<sup>2+</sup> in that system. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Phonon scattering studies of Ni and V centres in GaP and InP |
Тип |
paper |
DOI |
10.1088/0953-8984/1/47/004 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
1 |
Первая страница |
9313 |
Последняя страница |
9324 |
Аффилиация |
M Sahraoui-Tahar; Dept. of Phys., Nottingham Univ., UK |
Аффилиация |
B Salce; Dept. of Phys., Nottingham Univ., UK |
Аффилиация |
L J Challis; Dept. of Phys., Nottingham Univ., UK |
Аффилиация |
N Butler; Dept. of Phys., Nottingham Univ., UK |
Аффилиация |
W Ulrici; Dept. of Phys., Nottingham Univ., UK |
Аффилиация |
B Cockayne; Dept. of Phys., Nottingham Univ., UK |
Выпуск |
47 |