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Автор M Sahraoui-Tahar
Автор B Salce
Автор L J Challis
Автор N Butler
Автор W Ulrici
Автор B Cockayne
Дата выпуска 1989-11-27
dc.description Thermal conductivity measurements have been made from 50 mK to 100 K of GaP and InP samples doped with Ni or V. The GaP samples both show strong resonant phonon scattering at 500 and 380 GHz respectively which is attributed to the T<sub>1</sub>-T<sub>2</sub> tunnelling splitting associated with a dynamic orthorhombic Jahn-Teller distortion of the T<sub>1</sub> orbital ground state of Ni<sup>2+</sup> and V<sup>2+</sup>. Low-frequency scattering in both systems is tentatively attributed to these same ions in complex with a defect. The assignment of the scattering to V<sup>2+</sup> is supported by studies of photo-induced changes in the V<sup>2+</sup> concentration. Uniaxial stress measurements on GaP:V suggest strong coupling to E modes but the strength of the coupling to T<sub>2</sub> modes is less clear. The absence of resonance scattering in a n-type sample of InP:Ni suggests the Ni is all in the Ni<sup>+</sup> state (<sup>2</sup>T<sub>2</sub>) as expected and the absence of scattering in n-type InP:V is consistent with the instability of V<sup>2+</sup> in that system.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Phonon scattering studies of Ni and V centres in GaP and InP
Тип paper
DOI 10.1088/0953-8984/1/47/004
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 1
Первая страница 9313
Последняя страница 9324
Аффилиация M Sahraoui-Tahar; Dept. of Phys., Nottingham Univ., UK
Аффилиация B Salce; Dept. of Phys., Nottingham Univ., UK
Аффилиация L J Challis; Dept. of Phys., Nottingham Univ., UK
Аффилиация N Butler; Dept. of Phys., Nottingham Univ., UK
Аффилиация W Ulrici; Dept. of Phys., Nottingham Univ., UK
Аффилиация B Cockayne; Dept. of Phys., Nottingham Univ., UK
Выпуск 47

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