Starting from measurements of the DC conductivity sigma (T) in the temperature range from 0.05 to 300 K, the authors can qualitatively describe the electron transport in NiCr-O thin films at low temperatures by its dependence on the atomic oxygen concentration c_O. At a critical value of c_O a metal-insulator transition occurs near T=0. In the metallic region the electrical behaviour can be interpreted in terms of weakly localised electrons including electron correlation. In the non-metallic region an activated temperature dependence is found which is due to variable-range hopping of strongly localised electrons.