| Автор | H Dintner |
| Автор | A Heinrich |
| Автор | C Gladun |
| Автор | R Mattheis |
| Дата выпуска | 1989-12-25 |
| dc.description | Starting from measurements of the DC conductivity sigma (T) in the temperature range from 0.05 to 300 K, the authors can qualitatively describe the electron transport in NiCr-O thin films at low temperatures by its dependence on the atomic oxygen concentration c<sub>O</sub>. At a critical value of c<sub>O</sub> a metal-insulator transition occurs near T=0. In the metallic region the electrical behaviour can be interpreted in terms of weakly localised electrons including electron correlation. In the non-metallic region an activated temperature dependence is found which is due to variable-range hopping of strongly localised electrons. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electron transport in NiCr-O thin films at low temperatures |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/51/011 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 10379 |
| Последняя страница | 10390 |
| Аффилиация | H Dintner; Akad. der Wissenschaften, Phys.-Tech. Inst., Jena, East Germany |
| Аффилиация | A Heinrich; Akad. der Wissenschaften, Phys.-Tech. Inst., Jena, East Germany |
| Аффилиация | C Gladun; Akad. der Wissenschaften, Phys.-Tech. Inst., Jena, East Germany |
| Аффилиация | R Mattheis; Akad. der Wissenschaften, Phys.-Tech. Inst., Jena, East Germany |
| Выпуск | 51 |
