Maximum binding energy of a shallow donor in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells
Jia-Lin Zhu; Jia-Lin Zhu; Centre of Theor. Phys., CCAST, Beijing, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-02-27
Аннотация:
Using a novel trial function for the ground state of a shallow donor in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells, the author has obtained a larger maximum of the binding energy than others. It shows that the coupling effect between the donor potential and the quantum wells is important.
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