| Автор | Jia-Lin Zhu |
| Дата выпуска | 1989-02-27 |
| dc.description | Using a novel trial function for the ground state of a shallow donor in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells, the author has obtained a larger maximum of the binding energy than others. It shows that the coupling effect between the donor potential and the quantum wells is important. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Maximum binding energy of a shallow donor in GaAs-Ga<sub>1-x</sub>Al<sub>x</sub>As quantum wells |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/8/018 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | 1539 |
| Последняя страница | 1542 |
| Аффилиация | Jia-Lin Zhu; Centre of Theor. Phys., CCAST, Beijing, China |
| Выпуск | 8 |
