The initial stages of growth of Ge on Si(001) studied by X-ray diffraction
A A Williams; J E Macdonald; R G van Silfhout; J F van der Veen; A D Johnson; C Norris; A A Williams; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK; J E Macdonald; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK; R G van Silfhout; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK; J F van der Veen; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK; A D Johnson; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK; C Norris; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK
Журнал:
Journal of Physics: Condensed Matter
Дата:
1989-10-01
Аннотация:
The structure of an ultra-thin epitaxial Ge layer during in situ deposition onto a Si(001) surface has been investigated. Peaks arising from the 2*1 reconstruction disappear at a coverage of approximately=ML. The layer is epitaxial with respect to the substrate up to a coverage of approximately=5 Ml, beyond which the strained layer relaxes gradually. At a coverage of 10 ML the lateral strain is reduced to 2.2% compared with 4.0% in the unrelaxed layer.
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