| Автор | A A Williams |
| Автор | J E Macdonald |
| Автор | R G van Silfhout |
| Автор | J F van der Veen |
| Автор | A D Johnson |
| Автор | C Norris |
| Дата выпуска | 1989-10-01 |
| dc.description | The structure of an ultra-thin epitaxial Ge layer during in situ deposition onto a Si(001) surface has been investigated. Peaks arising from the 2*1 reconstruction disappear at a coverage of approximately=ML. The layer is epitaxial with respect to the substrate up to a coverage of approximately=5 Ml, beyond which the strained layer relaxes gradually. At a coverage of 10 ML the lateral strain is reduced to 2.2% compared with 4.0% in the unrelaxed layer. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The initial stages of growth of Ge on Si(001) studied by X-ray diffraction |
| Тип | paper |
| DOI | 10.1088/0953-8984/1/SB/073 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 1 |
| Первая страница | SB273 |
| Последняя страница | SB274 |
| Аффилиация | A A Williams; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK |
| Аффилиация | J E Macdonald; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK |
| Аффилиация | R G van Silfhout; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK |
| Аффилиация | J F van der Veen; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK |
| Аффилиация | A D Johnson; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK |
| Аффилиация | C Norris; Dept. of Phys., Univ. of Wales Coll. of Cardiff, UK |
| Выпуск | SB |
