Roughness scaling of plasma-etched silicon surfaces
Pascal Brault; Philippe Dumas; Franck Salvan
Журнал:
Journal of Physics: Condensed Matter
Дата:
1998-01-12
Аннотация:
Atomic force microscopy reveals scaling behaviour of silicon surfaces etched by plasma. The experimental results are compared with some theoretical models. It is shown that plasma-induced roughness is driven by a phenomenon that can be described by shadowing instabilities resulting in columnar microstructure growth. The same scaling properties as are predicted by a growth model are obtained.
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