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Автор Pascal Brault
Автор Philippe Dumas
Автор Franck Salvan
Дата выпуска 1998-01-12
dc.description Atomic force microscopy reveals scaling behaviour of silicon surfaces etched by plasma. The experimental results are compared with some theoretical models. It is shown that plasma-induced roughness is driven by a phenomenon that can be described by shadowing instabilities resulting in columnar microstructure growth. The same scaling properties as are predicted by a growth model are obtained.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Roughness scaling of plasma-etched silicon surfaces
Тип lett
DOI 10.1088/0953-8984/10/1/004
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 10
Первая страница L27
Последняя страница L32
Выпуск 1

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