It was revealed that specific directional light scattering takes place in ferroelectric semiconductors in polydomain states. This scattering is observed at to the light beam direction. The behaviour of this effect suggests that it is caused by light reflection by layers formed by charge carriers which screen charged domain walls between opposing domains. The orientation of the reflecting layers was determined. This effect allows one to check easily the degree of unipolarity throughout the sample and refine optically the complete crystallographic orientation.