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Автор J H Li
Автор Y Yamaguchi
Автор H Hashizume
Автор N Usami
Автор Y Shiraki
Дата выпуска 1998-10-05
dc.description We report grazing-angle x-ray scattering investigations of interface morphologies in strained multilayers grown on vicinal Si(111) substrates. Samples with different Ge fractions in the alloy layers show a common feature of wavy interfaces arising from the substrate miscut and step bunching. They differ, however, quite remarkably in the wavy period. Our analyses show that the stress-driven step redistribution should take the responsibility for such behaviours of the interfaces.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Wavy interface morphologies in strained multilayers on vicinal Si(111) substrates
Тип paper
DOI 10.1088/0953-8984/10/39/003
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 10
Первая страница 8643
Последняя страница 8652
Выпуск 39

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