The progression of interface structure through sputtered Co/Cu and Co/Pt multilayer films
B D Fulthorpe; D E Joyce; T P A Hase; A S H Rozatian; B K Tanner; P J Grundy
Журнал:
Journal of Physics: Condensed Matter
Дата:
1999-11-01
Аннотация:
The progression of interface structure through some Co/Cu and Co/Pt multilayer systems, grown on silicon and glass substrates respectively, has been studied using grazing incidence x-ray scattering. Simulations of the data shows that the interface characteristics of the Co/Cu system propagate unchanged with increasing numbers of bilayers. The interface roughness, lateral length scale and fractal dimension remain constant across the series of samples. In contrast, a reduction in the interface conformality between top and bottom surfaces with respect to increasing numbers of bilayers is observed in the Co/Pt system; however the roughness correlation between successive layers is largely maintained. Magnetization data for Co/Cu indicate that the Co layer immediately adjacent to the substrate is magnetically `dead'. This could result from mixing of the cobalt and silicon oxide species at the substrate interface.
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