Experimental investigation of double-barrier SINIS (superconductor-insulator-normal-insulator-superconductor) structures
G Carapella; G Costabile; R Latempa; G Carapella; Unità INFM and Dipartimento di Fisica, Università di Salerno, I-84081 Baronissi, Italy; G Costabile; Unità INFM and Dipartimento di Fisica, Università di Salerno, I-84081 Baronissi, Italy; R Latempa; Unità INFM and Dipartimento di Fisica, Università di Salerno, I-84081 Baronissi, Italy
Журнал:
Journal of Physics: Condensed Matter
Дата:
2000-01-10
Аннотация:
Double-barrier Nb/AlO<sub>x </sub> /Al/AlO<sub>x </sub> /Nb devices were fabricated and investigated in direct-current and alternating-current (ac) electromagnetic fields. The occurrence of current singularities and of the ac Josephson effect at T = 4.2 K are demonstrated. In a three-terminal configuration, a transistor-like behaviour of the structure is also observed.
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