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Автор G Carapella
Автор G Costabile
Автор R Latempa
Дата выпуска 2000-01-10
dc.description Double-barrier Nb/AlO<sub>x </sub> /Al/AlO<sub>x </sub> /Nb devices were fabricated and investigated in direct-current and alternating-current (ac) electromagnetic fields. The occurrence of current singularities and of the ac Josephson effect at T = 4.2 K are demonstrated. In a three-terminal configuration, a transistor-like behaviour of the structure is also observed.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Experimental investigation of double-barrier SINIS (superconductor-insulator-normal-insulator-superconductor) structures
Тип lett
DOI 10.1088/0953-8984/12/1/101
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 12
Первая страница L1
Последняя страница L7
Аффилиация G Carapella; Unità INFM and Dipartimento di Fisica, Università di Salerno, I-84081 Baronissi, Italy
Аффилиация G Costabile; Unità INFM and Dipartimento di Fisica, Università di Salerno, I-84081 Baronissi, Italy
Аффилиация R Latempa; Unità INFM and Dipartimento di Fisica, Università di Salerno, I-84081 Baronissi, Italy
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