The shallow acceptor impurity states in V-shaped GaAs-Ga_{1 - x} Al_x As quantum wires (V-QWRs) are investigated by a coordinate transformation method. An asymmetrical distribution of impurity binding energy along the direction normal to the V-shaped boundaries is found. The impurity position corresponding to the maximum binding energy deviates from the centre of V-QWRs. The variations in impurity binding energy with the dimension and curvatures of V-QWRs are discussed.