| Автор | Zhen-Yan Deng |
| Автор | Tatsuki Ohji |
| Автор | Xiaoshuang Chen |
| Дата выпуска | 2000-04-03 |
| dc.description | The shallow acceptor impurity states in V-shaped GaAs-Ga<sub>1 - x </sub> Al<sub>x </sub> As quantum wires (V-QWRs) are investigated by a coordinate transformation method. An asymmetrical distribution of impurity binding energy along the direction normal to the V-shaped boundaries is found. The impurity position corresponding to the maximum binding energy deviates from the centre of V-QWRs. The variations in impurity binding energy with the dimension and curvatures of V-QWRs are discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Shallow acceptor impurity states in V-shaped GaAs-Ga<sub>1 - x</sub>Al<sub>x</sub>As quantum wires |
| Тип | paper |
| DOI | 10.1088/0953-8984/12/13/312 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 12 |
| Первая страница | 3019 |
| Последняя страница | 3027 |
| Выпуск | 13 |
