| Автор | A B McLean |
| Дата выпуска | 1990-01-29 |
| dc.description | The lineshapes of the In 4d and As 3d core-levels in InAs(110) have been studied using least squares analysis and the surface core-level shifts are found to be +0.28+or-0.02 and -0.30+or-0.02 eV respectively. Consequently, the surface core-level shifts have now been determined for the entire family of III-V semiconductor surfaces which includes GaX(110) and InX(110), where X=P, As and Sb. It is shown that the quantity Delta E<sub>C</sub>- Delta E<sub>A</sub>, where Delta E<sub>C</sub> is the cation surface core-level shift and Delta E<sub>A</sub> is the anion surface core-level shift, exhibits a systematic dependence upon the semiconductor ionicity. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Surface core-level shifts for the (110) cleavage face of III-V semiconductors: InAs(110) |
| Тип | lett |
| DOI | 10.1088/0953-8984/2/4/022 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 2 |
| Первая страница | 1027 |
| Последняя страница | 1032 |
| Аффилиация | A B McLean; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA |
| Выпуск | 4 |
