Experimental determination of the intrinsic stacking-fault energy of SiC crystals
X G Ning; H Q Ye; X G Ning; Lab. of Atomic Imaging of Solids, Inst. of Metal Res., Acad. Sinica, Liaoning, China; H Q Ye; Lab. of Atomic Imaging of Solids, Inst. of Metal Res., Acad. Sinica, Liaoning, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1990-12-17
Аннотация:
The intrinsic stacking fault in the (111) plane of SiC, which is closed by two Shockley partial dislocations, has been observed by high-resolution electron microscopy. The energy of the intrinsic stacking-fault of SiC is experimentally determined and compared with the theoretical value calculated by Denteneer et al. (1987).
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