| Автор | X G Ning |
| Автор | H Q Ye |
| Дата выпуска | 1990-12-17 |
| dc.description | The intrinsic stacking fault in the (111) plane of SiC, which is closed by two Shockley partial dislocations, has been observed by high-resolution electron microscopy. The energy of the intrinsic stacking-fault of SiC is experimentally determined and compared with the theoretical value calculated by Denteneer et al. (1987). |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Experimental determination of the intrinsic stacking-fault energy of SiC crystals |
| Тип | lett |
| DOI | 10.1088/0953-8984/2/50/028 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 2 |
| Первая страница | 10223 |
| Последняя страница | 10225 |
| Аффилиация | X G Ning; Lab. of Atomic Imaging of Solids, Inst. of Metal Res., Acad. Sinica, Liaoning, China |
| Аффилиация | H Q Ye; Lab. of Atomic Imaging of Solids, Inst. of Metal Res., Acad. Sinica, Liaoning, China |
| Выпуск | 50 |
