| Автор | P V Kelly |
| Автор | J D O'Mahony |
| Автор | T Rasing |
| Автор | J F McGilp |
| Дата выпуска | 1991-11-01 |
| dc.description | Ultra high-vacuum studies of optical second-harmonic generation (SHG) from well-characterized Si(111)-Ga interfaces in the submonolayer coverage regime are reported. Both intensity and phase measurements of the SH signal have been made. The chi <sub>xxx</sub> and chi <sub>xxx</sub> susceptibility tensor components are shown to have resonant enhancement around a third of a monolayer, for 1064 nm excitation. The origin of this behaviour is discussed in terms of the structure and bonding at the interface. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Characterization of the Si(111)-Ga interface using optical second-harmonic generation |
| Тип | paper |
| DOI | 10.1088/0953-8984/3/S/031 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 3 |
| Первая страница | S193 |
| Последняя страница | S198 |
| Аффилиация | P V Kelly; Dept. of Pure & Appl. Phys., Dublin Univ., Ireland |
| Аффилиация | J D O'Mahony; Dept. of Pure & Appl. Phys., Dublin Univ., Ireland |
| Аффилиация | T Rasing; Dept. of Pure & Appl. Phys., Dublin Univ., Ireland |
| Аффилиация | J F McGilp; Dept. of Pure & Appl. Phys., Dublin Univ., Ireland |
| Выпуск | S |
