Electronic structure and localization behaviour in the GaAs/AlAs Fibonacci superlattice
K Hirose; D Y K Ko; H Kamimura; K Hirose; Dept. of Phys., Tokyo Univ., Japan; D Y K Ko; Dept. of Phys., Tokyo Univ., Japan; H Kamimura; Dept. of Phys., Tokyo Univ., Japan
Журнал:
Journal of Physics: Condensed Matter
Дата:
1992-07-06
Аннотация:
The authors study the electronic structure of the GaAs/AlAs Fibonacci superlattice using a semi-empirical sp<sup>3</sup>s* tight-binding method. They find that a self-similar energy spectrum can be seen in the band structure, although the energy spectrum depends strongly on the wavevector parallel to the layers. Furthermore, they find that a localization character is enhanced due to the band hybridization, producing a spiky density of states and a localization-like effect of the wavefunctions in the hybridized energy region. The reasons for the localization-like behaviour are discussed briefly.
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