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Автор K Hirose
Автор D Y K Ko
Автор H Kamimura
Дата выпуска 1992-07-06
dc.description The authors study the electronic structure of the GaAs/AlAs Fibonacci superlattice using a semi-empirical sp<sup>3</sup>s* tight-binding method. They find that a self-similar energy spectrum can be seen in the band structure, although the energy spectrum depends strongly on the wavevector parallel to the layers. Furthermore, they find that a localization character is enhanced due to the band hybridization, producing a spiky density of states and a localization-like effect of the wavefunctions in the hybridized energy region. The reasons for the localization-like behaviour are discussed briefly.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Electronic structure and localization behaviour in the GaAs/AlAs Fibonacci superlattice
Тип paper
DOI 10.1088/0953-8984/4/27/012
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 4
Первая страница 5947
Последняя страница 5958
Аффилиация K Hirose; Dept. of Phys., Tokyo Univ., Japan
Аффилиация D Y K Ko; Dept. of Phys., Tokyo Univ., Japan
Аффилиация H Kamimura; Dept. of Phys., Tokyo Univ., Japan
Выпуск 27

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