The bias-temperature effect in a rectifying Nb/C<sub>60</sub>/p-Si structure: evidence for mobile negative charges in the solid C<sub>60</sub> film
K M Chen; Y Q Jia; S X Jin; K Wu; X D Zhang; W B Zhao; C Y Li; Z N Gu; K M Chen; Dept. of Phys., Beijing Univ., China; Y Q Jia; Dept. of Phys., Beijing Univ., China; S X Jin; Dept. of Phys., Beijing Univ., China; K Wu; Dept. of Phys., Beijing Univ., China; X D Zhang; Dept. of Phys., Beijing Univ., China; W B Zhao; Dept. of Phys., Beijing Univ., China; C Y Li; Dept. of Phys., Beijing Univ., China; Z N Gu; Dept. of Phys., Beijing Univ., China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1994-07-04
Аннотация:
Solid C<sub>60</sub> film was grown on a p-type Si substrate and a rectifying Nb/C<sub>60</sub>/p-Si structure was prepared. Capacitance-voltage (C-V) measurements showed that for temperatures above 260 K the C-V curve of the Nb/Co<sub>60</sub>/p-Si structure shifted along the voltage axis depending on biasing conditions. We analysed this effect to reveal the existence of mobile negative charges in the C<sub>60</sub> layer and determine the density of the mobile charges.
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