| Автор | K M Chen |
| Автор | Y Q Jia |
| Автор | S X Jin |
| Автор | K Wu |
| Автор | X D Zhang |
| Автор | W B Zhao |
| Автор | C Y Li |
| Автор | Z N Gu |
| Дата выпуска | 1994-07-04 |
| dc.description | Solid C<sub>60</sub> film was grown on a p-type Si substrate and a rectifying Nb/C<sub>60</sub>/p-Si structure was prepared. Capacitance-voltage (C-V) measurements showed that for temperatures above 260 K the C-V curve of the Nb/Co<sub>60</sub>/p-Si structure shifted along the voltage axis depending on biasing conditions. We analysed this effect to reveal the existence of mobile negative charges in the C<sub>60</sub> layer and determine the density of the mobile charges. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The bias-temperature effect in a rectifying Nb/C<sub>60</sub>/p-Si structure: evidence for mobile negative charges in the solid C<sub>60</sub> film |
| Тип | lett |
| DOI | 10.1088/0953-8984/6/27/002 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 6 |
| Первая страница | L367 |
| Последняя страница | L372 |
| Аффилиация | K M Chen; Dept. of Phys., Beijing Univ., China |
| Аффилиация | Y Q Jia; Dept. of Phys., Beijing Univ., China |
| Аффилиация | S X Jin; Dept. of Phys., Beijing Univ., China |
| Аффилиация | K Wu; Dept. of Phys., Beijing Univ., China |
| Аффилиация | X D Zhang; Dept. of Phys., Beijing Univ., China |
| Аффилиация | W B Zhao; Dept. of Phys., Beijing Univ., China |
| Аффилиация | C Y Li; Dept. of Phys., Beijing Univ., China |
| Аффилиация | Z N Gu; Dept. of Phys., Beijing Univ., China |
| Выпуск | 27 |
