Ion neutralization at an Si- or Ge-type semiconductor surface
G H Wei; Z X Yang; X Q Dai; S Y Wei; M Wang; T Zhang; G H Wei; Dept. of Phys., Henan Normal Univ., Xinxiang, China; Z X Yang; Dept. of Phys., Henan Normal Univ., Xinxiang, China; X Q Dai; Dept. of Phys., Henan Normal Univ., Xinxiang, China; S Y Wei; Dept. of Phys., Henan Normal Univ., Xinxiang, China; M Wang; Dept. of Phys., Henan Normal Univ., Xinxiang, China; T Zhang; Dept. of Phys., Henan Normal Univ., Xinxiang, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1994-07-04
Аннотация:
The approximate many-level method is used to study ion neutralization near the surface of an Si- or Ge-type semiconductor. The tight-binding approximation is employed to model the semiconductor as a one-dimensional chain of sp hybrids. Calculations show that the electronic structure and the component of the substrate surface, by introducing the surface density, play important roles in the ion resonance charge transfer.
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