| Автор | G H Wei |
| Автор | Z X Yang |
| Автор | X Q Dai |
| Автор | S Y Wei |
| Автор | M Wang |
| Автор | T Zhang |
| Дата выпуска | 1994-07-04 |
| dc.description | The approximate many-level method is used to study ion neutralization near the surface of an Si- or Ge-type semiconductor. The tight-binding approximation is employed to model the semiconductor as a one-dimensional chain of sp hybrids. Calculations show that the electronic structure and the component of the substrate surface, by introducing the surface density, play important roles in the ion resonance charge transfer. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Ion neutralization at an Si- or Ge-type semiconductor surface |
| Тип | paper |
| DOI | 10.1088/0953-8984/6/27/008 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 6 |
| Первая страница | 4991 |
| Последняя страница | 4998 |
| Аффилиация | G H Wei; Dept. of Phys., Henan Normal Univ., Xinxiang, China |
| Аффилиация | Z X Yang; Dept. of Phys., Henan Normal Univ., Xinxiang, China |
| Аффилиация | X Q Dai; Dept. of Phys., Henan Normal Univ., Xinxiang, China |
| Аффилиация | S Y Wei; Dept. of Phys., Henan Normal Univ., Xinxiang, China |
| Аффилиация | M Wang; Dept. of Phys., Henan Normal Univ., Xinxiang, China |
| Аффилиация | T Zhang; Dept. of Phys., Henan Normal Univ., Xinxiang, China |
| Выпуск | 27 |
