| Автор | Hao Xuejun |
| Автор | Zhang Liyuan |
| Автор | Shen Jiang |
| Автор | Wang Huaiyu |
| Дата выпуска | 1994-09-05 |
| dc.description | The electronic structure of HgBa<sub>2</sub>Ca<sub>2</sub>Cu<sub>3</sub>O<sub>8+ delta </sub> with various delta (0, 0.12, 0.2 and 0.4) and pressures (ambient pressure, 5 GPa, 10 GPa and 20 GPa) has been calculated by the recursion method. Our results show that the electronic structure of this series is highly two dimensional with a large N(E<sub>F</sub>). The hole concentration of the CuO<sub>2</sub> layers and N (E<sub>F</sub>) increase monotonically as delta increases from 0 to 0.4. We thus suggest that the ideal delta should be 0.4. With increasing pressure, the hole concentration increases further and E<sub>F</sub> rises. The relationship between T<sub>c</sub> and pressure can be described by the same model of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7- delta </sub>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electronic structure of HgBa<sub>2</sub>Ca<sub>2</sub>Cu<sub>3</sub>O<sub>8+ delta </sub>: the role of O(4) and high pressure |
| Тип | paper |
| DOI | 10.1088/0953-8984/6/36/020 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 6 |
| Первая страница | 7385 |
| Последняя страница | 7394 |
| Аффилиация | Hao Xuejun; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | Zhang Liyuan; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | Shen Jiang; Dept. of Phys., Peking Univ., Beijing, China |
| Аффилиация | Wang Huaiyu; Dept. of Phys., Peking Univ., Beijing, China |
| Выпуск | 36 |
