In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C<sub>60</sub> interfacial systems
W B Zhao; J Chen; K Wu; J L Zhang; C Y Li; D L Yin; Z N Gu; H Zhou; Z X Jin; W B Zhao; Dept. of Phys., Peking Univ., Beijing, China; J Chen; Dept. of Phys., Peking Univ., Beijing, China; K Wu; Dept. of Phys., Peking Univ., Beijing, China; J L Zhang; Dept. of Phys., Peking Univ., Beijing, China; C Y Li; Dept. of Phys., Peking Univ., Beijing, China; D L Yin; Dept. of Phys., Peking Univ., Beijing, China; Z N Gu; Dept. of Phys., Peking Univ., Beijing, China; H Zhou; Dept. of Phys., Peking Univ., Beijing, China; Z X Jin; Dept. of Phys., Peking Univ., Beijing, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1994-10-10
Аннотация:
The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C<sub>60</sub> has been studied by in situ electronic transport measurements during the deposition of metal-C<sub>60</sub> ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C<sub>60</sub> and the electronic transport properties of the metal-doped-monolayer C<sub>60</sub> can be obtained after careful analysis.
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