Автор |
W B Zhao |
Автор |
J Chen |
Автор |
K Wu |
Автор |
J L Zhang |
Автор |
C Y Li |
Автор |
D L Yin |
Автор |
Z N Gu |
Автор |
H Zhou |
Автор |
Z X Jin |
Дата выпуска |
1994-10-10 |
dc.description |
The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C<sub>60</sub> has been studied by in situ electronic transport measurements during the deposition of metal-C<sub>60</sub> ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C<sub>60</sub> and the electronic transport properties of the metal-doped-monolayer C<sub>60</sub> can be obtained after careful analysis. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C<sub>60</sub> interfacial systems |
Тип |
lett |
DOI |
10.1088/0953-8984/6/41/002 |
Electronic ISSN |
1361-648X |
Print ISSN |
0953-8984 |
Журнал |
Journal of Physics: Condensed Matter |
Том |
6 |
Первая страница |
L631 |
Последняя страница |
L636 |
Аффилиация |
W B Zhao; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
J Chen; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
K Wu; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
J L Zhang; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
C Y Li; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
D L Yin; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
Z N Gu; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
H Zhou; Dept. of Phys., Peking Univ., Beijing, China |
Аффилиация |
Z X Jin; Dept. of Phys., Peking Univ., Beijing, China |
Выпуск |
41 |