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Автор W B Zhao
Автор J Chen
Автор K Wu
Автор J L Zhang
Автор C Y Li
Автор D L Yin
Автор Z N Gu
Автор H Zhou
Автор Z X Jin
Дата выпуска 1994-10-10
dc.description The two-dimensional doping by charge transfer and/or diffusion of metal atoms into C<sub>60</sub> has been studied by in situ electronic transport measurements during the deposition of metal-C<sub>60</sub> ultrathin bilayers. The results show that the transport properties of these interfacial systems are significantly altered by such doping processes. Some useful information about the charge transfer from metal to C<sub>60</sub> and the electronic transport properties of the metal-doped-monolayer C<sub>60</sub> can be obtained after careful analysis.
Формат application.pdf
Издатель Institute of Physics Publishing
Название In situ electronic transport measurement as a tool for investigating the 2D doping in metal-C<sub>60</sub> interfacial systems
Тип lett
DOI 10.1088/0953-8984/6/41/002
Electronic ISSN 1361-648X
Print ISSN 0953-8984
Журнал Journal of Physics: Condensed Matter
Том 6
Первая страница L631
Последняя страница L636
Аффилиация W B Zhao; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация J Chen; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация K Wu; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация J L Zhang; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация C Y Li; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация D L Yin; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация Z N Gu; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация H Zhou; Dept. of Phys., Peking Univ., Beijing, China
Аффилиация Z X Jin; Dept. of Phys., Peking Univ., Beijing, China
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