| Автор | K M Chen |
| Автор | Y Q Jia |
| Автор | S X Jin |
| Автор | K Wu |
| Автор | W B Zhao |
| Автор | C Y Li |
| Автор | Z N Gu |
| Автор | X H Zhou |
| Дата выпуска | 1995-04-03 |
| dc.description | Heterojunctions of undoped solid C<sub>60</sub> and n- or p-type-doped crystalline Si have been obtained. Current-voltage measurements show that both C<sub>60</sub>/n-Si and C<sub>60</sub>/p-Si contacts are rectifying but their directions of rectification are opposite. Thermal activation measurements at a fixed forward bias show an exponential dependence of current on the reciprocal of temperature, from which we determine the effective barrier height as 0.30 eV for C<sub>60</sub>/n-Si and 0.48 eV for C<sub>60</sub>/p-Si. Using energy-band models for heterojunctions we assign values to the positions of the conduction and valence bands of the solid C<sub>60</sub> relative to those of crystalline Si and derive the electron affinity and band gap of solid C<sub>60</sub> film as 3.92 eV and <1.72 eV, respectively. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Heterojunctions of solid C<sub>60</sub> and crystalline silicon: rectifying properties and energy-band models |
| Тип | lett |
| DOI | 10.1088/0953-8984/7/14/004 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 7 |
| Первая страница | L201 |
| Последняя страница | L207 |
| Аффилиация | K M Chen; Dept. of Phys., Beijing Univ., China |
| Аффилиация | Y Q Jia; Dept. of Phys., Beijing Univ., China |
| Аффилиация | S X Jin; Dept. of Phys., Beijing Univ., China |
| Аффилиация | K Wu; Dept. of Phys., Beijing Univ., China |
| Аффилиация | W B Zhao; Dept. of Phys., Beijing Univ., China |
| Аффилиация | C Y Li; Dept. of Phys., Beijing Univ., China |
| Аффилиация | Z N Gu; Dept. of Phys., Beijing Univ., China |
| Аффилиация | X H Zhou; Dept. of Phys., Beijing Univ., China |
| Выпуск | 14 |
