Photoluminescence of a silicon oxide film formed by anodization in the electropolishing region in HF solution
Xiangyang Ma; Lideng Chen; Zhenguo Ji; Hongnian Yao; Duanlin Que; Xiangyang Ma; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China; Lideng Chen; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China; Zhenguo Ji; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China; Hongnian Yao; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China; Duanlin Que; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China
Журнал:
Journal of Physics: Condensed Matter
Дата:
1995-04-03
Аннотация:
This paper reports the photoluminescence (PL) of a silicon oxide film formed by anodization in the electropolishing region in HF solution. The PL is preliminarily believed to be due to certain light-emitting centres in the silicon oxide film. In addition, the paper suggests that not all the PL of anodized silicon formed in HF solution can be solely ascribed to the porous silicon.
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