| Автор | Xiangyang Ma |
| Автор | Lideng Chen |
| Автор | Zhenguo Ji |
| Автор | Hongnian Yao |
| Автор | Duanlin Que |
| Дата выпуска | 1995-04-03 |
| dc.description | This paper reports the photoluminescence (PL) of a silicon oxide film formed by anodization in the electropolishing region in HF solution. The PL is preliminarily believed to be due to certain light-emitting centres in the silicon oxide film. In addition, the paper suggests that not all the PL of anodized silicon formed in HF solution can be solely ascribed to the porous silicon. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Photoluminescence of a silicon oxide film formed by anodization in the electropolishing region in HF solution |
| Тип | paper |
| DOI | 10.1088/0953-8984/7/14/026 |
| Electronic ISSN | 1361-648X |
| Print ISSN | 0953-8984 |
| Журнал | Journal of Physics: Condensed Matter |
| Том | 7 |
| Первая страница | 2901 |
| Последняя страница | 2907 |
| Аффилиация | Xiangyang Ma; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China |
| Аффилиация | Lideng Chen; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China |
| Аффилиация | Zhenguo Ji; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China |
| Аффилиация | Hongnian Yao; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China |
| Аффилиация | Duanlin Que; Nat. Lab. of High Purity Silicon, Zhejiang Univ., Hangzhou, China |
| Выпуск | 14 |
