1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates
V A Egorov; G E Cirlin; N K Polyakov; V N Petrov; A A Tonkikh; B V Volovik; Yu G Musikhin; A E Zhukov; A F Tsatsul'nikov; V M Ustinov
Журнал:
Nanotechnology
Дата:
2000-12-01
Аннотация:
Optical and structural properties of multilayer structures with InAs/GaAs quantum dots are investigated. It is shown that under optimal growth conditions, 1.3-1.4 µm emission can be achieved. Possible scenarios of quantum dot behaviour evaluation are discussed in a frame of elastic theory to explain differences in optical properties of the grown structures.
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