| Автор | V A Egorov |
| Автор | G E Cirlin |
| Автор | N K Polyakov |
| Автор | V N Petrov |
| Автор | A A Tonkikh |
| Автор | B V Volovik |
| Автор | Yu G Musikhin |
| Автор | A E Zhukov |
| Автор | A F Tsatsul'nikov |
| Автор | V M Ustinov |
| Дата выпуска | 2000-12-01 |
| dc.description | Optical and structural properties of multilayer structures with InAs/GaAs quantum dots are investigated. It is shown that under optimal growth conditions, 1.3-1.4 µm emission can be achieved. Possible scenarios of quantum dot behaviour evaluation are discussed in a frame of elastic theory to explain differences in optical properties of the grown structures. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | 1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates |
| Тип | paper |
| DOI | 10.1088/0957-4484/11/4/326 |
| Electronic ISSN | 1361-6528 |
| Print ISSN | 0957-4484 |
| Журнал | Nanotechnology |
| Том | 11 |
| Первая страница | 323 |
| Последняя страница | 326 |
| Выпуск | 4 |
