The temperature dependence of diamond film morphology
Hae Nuh Chu; A R Lefkow; E A Den Hartog; L W Anderson; M G Lagally; J E Lawler; Hae Nuh Chu; Wisconsin Univ., Madison, WI, USA; A R Lefkow; Wisconsin Univ., Madison, WI, USA; E A Den Hartog; Wisconsin Univ., Madison, WI, USA; L W Anderson; Wisconsin Univ., Madison, WI, USA; M G Lagally; Wisconsin Univ., Madison, WI, USA; J E Lawler; Wisconsin Univ., Madison, WI, USA
Журнал:
Plasma Sources Science and Technology
Дата:
1992-08-01
Аннотация:
Diamond films have been grown on a Si substrate that acts as the anode of a tubular DC hollow cathode discharge, using CH<sub>4</sub>-H<sub>2</sub> as the feed gas mixture. Changes in film morphology were observed for different electrode spacing but the film morphology was nearly independent of the substrate temperature. This suggests that the film morphology depends on the concentration of free radicals reaching the anode.
307.2Кб