Analysis of the standard deviation of surface potential fluctuations in MOS interface from DLTS spectra
Serhat Özder; Ismail Atilgan; Bayram Katircioglu; Serhat Özder; Department of Physics, Middle East Technical University, 06531 Ankara, Turkey; Ismail Atilgan; Department of Physics, Middle East Technical University, 06531 Ankara, Turkey; Bayram Katircioglu; Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
Журнал:
Modelling and Simulation in Materials Science and Engineering
Дата:
1998-05-01
Аннотация:
The surface potential fluctuations can have significant effects on both the magnitude and shape of the measured small-pulse DLTS spectrum. An increase in the dispersion parameter of the surface potential distribution, which is assumed to have a Gaussian form, leads to a reduction in the DLTS signal size, a shift of the peak position and a broadening of the peak shape. A computer program including the exponential temperature dependence of hole capture cross section, , was developed to analyse temperature-scan DLTS spectra of a MOS structure; in the evaluation procedure , and are taken as fitting parameters. A bias dependence of has been found and an interpretation of this behaviour has been attempted in the light of random point charges (Brews) and patchwork (Nicollian-Goetzberger) models.
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