| Автор | Serhat Özder |
| Автор | Ismail Atilgan |
| Автор | Bayram Katircioglu |
| Дата выпуска | 1998-05-01 |
| dc.description | The surface potential fluctuations can have significant effects on both the magnitude and shape of the measured small-pulse DLTS spectrum. An increase in the dispersion parameter of the surface potential distribution, which is assumed to have a Gaussian form, leads to a reduction in the DLTS signal size, a shift of the peak position and a broadening of the peak shape. A computer program including the exponential temperature dependence of hole capture cross section, , was developed to analyse temperature-scan DLTS spectra of a MOS structure; in the evaluation procedure , and are taken as fitting parameters. A bias dependence of has been found and an interpretation of this behaviour has been attempted in the light of random point charges (Brews) and patchwork (Nicollian-Goetzberger) models. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Analysis of the standard deviation of surface potential fluctuations in MOS interface from DLTS spectra |
| Тип | paper |
| DOI | 10.1088/0965-0393/6/3/005 |
| Electronic ISSN | 1361-651X |
| Print ISSN | 0965-0393 |
| Журнал | Modelling and Simulation in Materials Science and Engineering |
| Том | 6 |
| Первая страница | 261 |
| Последняя страница | 271 |
| Аффилиация | Serhat Özder; Department of Physics, Middle East Technical University, 06531 Ankara, Turkey |
| Аффилиация | Ismail Atilgan; Department of Physics, Middle East Technical University, 06531 Ankara, Turkey |
| Аффилиация | Bayram Katircioglu; Department of Physics, Middle East Technical University, 06531 Ankara, Turkey |
| Выпуск | 3 |
