Synthesis and Crystal Growth of A<sup>III</sup>B<sup>V</sup> Semiconducting Compounds Under High Pressure of Nitrogen
Izabella Grzegory; Stanislaw Krukowski; Izabella Grzegory; High Pressure Research Centre, Polish Academy of Sciences, 01-142 Warsaw, ul. Sokolowska 29/37, Poland; Stanislaw Krukowski; High Pressure Research Centre, Polish Academy of Sciences, 01-142 Warsaw, ul. Sokolowska 29/37, Poland
Журнал:
Physica Scripta
Дата:
1991-01-01
Аннотация:
Nitrogen under high pressure due to its elevated thermodynamic potential can be used for the synthesis of semiconducting compounds. High temperature growth of III-group metal nitrides from metallic solution is discussed and illustrated by the results of crystal growth of GaN. The growth of III-V crystals from the melts under high N<sub>2</sub> pressure leads to high concentration of substitutional nitrogen. The results of crystal growth experiments are used in the analysis of mixing properties in III-V-N pseudobinary systems.
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