| Автор | Izabella Grzegory |
| Автор | Stanislaw Krukowski |
| Дата выпуска | 1991-01-01 |
| dc.description | Nitrogen under high pressure due to its elevated thermodynamic potential can be used for the synthesis of semiconducting compounds. High temperature growth of III-group metal nitrides from metallic solution is discussed and illustrated by the results of crystal growth of GaN. The growth of III-V crystals from the melts under high N<sub>2</sub> pressure leads to high concentration of substitutional nitrogen. The results of crystal growth experiments are used in the analysis of mixing properties in III-V-N pseudobinary systems. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Synthesis and Crystal Growth of A<sup>III</sup>B<sup>V</sup> Semiconducting Compounds Under High Pressure of Nitrogen |
| Тип | paper |
| DOI | 10.1088/0031-8949/1991/T39/037 |
| Electronic ISSN | 1402-4896 |
| Print ISSN | 0031-8949 |
| Журнал | Physica Scripta |
| Том | 1991 |
| Первая страница | 242 |
| Последняя страница | 249 |
| Аффилиация | Izabella Grzegory; High Pressure Research Centre, Polish Academy of Sciences, 01-142 Warsaw, ul. Sokolowska 29/37, Poland |
| Аффилиация | Stanislaw Krukowski; High Pressure Research Centre, Polish Academy of Sciences, 01-142 Warsaw, ul. Sokolowska 29/37, Poland |
| Выпуск | T39 |
