A Physical Approach of MNOS LSI Memory Testing
Kjell O Jeppson; Kjell O Jeppson; Chalmers University of Technology, Research Laboratory of Electronics, S-412 96 Göteborg, Sweden
Журнал:
Physica Scripta
Дата:
1981-08-01
Аннотация:
User-oriented retention test programs for MNOS LSI memories with built-in test modes have been developed. Their application is demonstrated on the 4 kbit Word Alterable Read Only Memory (WAROM) ER 3400 in a qualification inspection by Bofors Aerotronics. Of particular interest in this program is the retention time, read disturb and endurance to repeated reprogramming. It is shown that repeated write/erase cycling causes significant deterioration in both retention and readability after 10<sup>5</sup>W/E cycles.
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