| Автор | Kjell O Jeppson |
| Дата выпуска | 1981-08-01 |
| dc.description | User-oriented retention test programs for MNOS LSI memories with built-in test modes have been developed. Their application is demonstrated on the 4 kbit Word Alterable Read Only Memory (WAROM) ER 3400 in a qualification inspection by Bofors Aerotronics. Of particular interest in this program is the retention time, read disturb and endurance to repeated reprogramming. It is shown that repeated write/erase cycling causes significant deterioration in both retention and readability after 10<sup>5</sup>W/E cycles. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A Physical Approach of MNOS LSI Memory Testing |
| Тип | paper |
| DOI | 10.1088/0031-8949/24/2/018 |
| Electronic ISSN | 1402-4896 |
| Print ISSN | 0031-8949 |
| Журнал | Physica Scripta |
| Том | 24 |
| Первая страница | 427 |
| Последняя страница | 429 |
| Аффилиация | Kjell O Jeppson; Chalmers University of Technology, Research Laboratory of Electronics, S-412 96 Göteborg, Sweden |
| Выпуск | 2 |
