Study of interface formation on the cleavage surfaces of A<sup>3</sup>{B}<sup>6</sup> layered semiconductors
P V Galiy; T M Nenchuk; J M Stakhira; P V Galiy; Physics Department, Ivan Franko Lviv National University, 50 Dragomanov street, Lviv, 795005, Ukraine; T M Nenchuk; Physics Department, Ivan Franko Lviv National University, 50 Dragomanov street, Lviv, 795005, Ukraine; J M Stakhira; Physics Department, Ivan Franko Lviv National University, 50 Dragomanov street, Lviv, 795005, Ukraine
Журнал:
Journal of Physics D: Applied Physics
Дата:
2001-01-07
Аннотация:
The adsorption activity of In<sub>4</sub>Se<sub>3</sub>, In<sub>4</sub>Se<sub>3</sub>(Ag), InSe, GaSe and TlGaSe<sub>2</sub> semiconductor crystal interlayer cleavage surfaces relatively to N<sub>2</sub>, O<sub>2</sub>, CO gases and water vapour has been studied by Auger electron spectroscopy and mass spectrometry. It has been determined that atomically clean layered crystal surfaces do not adsorb N<sub>2</sub> and water vapour but reveal a low activity with respect to O<sub>2</sub>. The kinetics of CO adsorption on surfaces obtained by cleavage in an UHV have been investigated. Indium and gallium selenides adsorb CO with the tendency increasing in the sequence GaSeTlGaSe<sub>2</sub> InSeIn<sub>4</sub>Se<sub>3</sub> crystals; In<sub>4</sub>Se<sub>3</sub> is essentially more active than the others. The adsorption model with dissociations of the CO molecule and carbon adsorption resulting from the layered structure and peculiarities in the electron-energy spectra of the crystals and their surfaces is discussed with the In<sub>4</sub>Se<sub>3</sub> crystal serving as example.
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