Автор |
P V Galiy |
Автор |
T M Nenchuk |
Автор |
J M Stakhira |
Дата выпуска |
2001-01-07 |
dc.description |
The adsorption activity of In<sub>4</sub>Se<sub>3</sub>, In<sub>4</sub>Se<sub>3</sub>(Ag), InSe, GaSe and TlGaSe<sub>2</sub> semiconductor crystal interlayer cleavage surfaces relatively to N<sub>2</sub>, O<sub>2</sub>, CO gases and water vapour has been studied by Auger electron spectroscopy and mass spectrometry. It has been determined that atomically clean layered crystal surfaces do not adsorb N<sub>2</sub> and water vapour but reveal a low activity with respect to O<sub>2</sub>. The kinetics of CO adsorption on surfaces obtained by cleavage in an UHV have been investigated. Indium and gallium selenides adsorb CO with the tendency increasing in the sequence GaSeTlGaSe<sub>2</sub> InSeIn<sub>4</sub>Se<sub>3</sub> crystals; In<sub>4</sub>Se<sub>3</sub> is essentially more active than the others. The adsorption model with dissociations of the CO molecule and carbon adsorption resulting from the layered structure and peculiarities in the electron-energy spectra of the crystals and their surfaces is discussed with the In<sub>4</sub>Se<sub>3</sub> crystal serving as example. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Название |
Study of interface formation on the cleavage surfaces of A<sup>3</sup>{B}<sup>6</sup> layered semiconductors |
Тип |
paper |
DOI |
10.1088/0022-3727/34/1/304 |
Electronic ISSN |
1361-6463 |
Print ISSN |
0022-3727 |
Журнал |
Journal of Physics D: Applied Physics |
Том |
34 |
Первая страница |
18 |
Последняя страница |
24 |
Аффилиация |
P V Galiy; Physics Department, Ivan Franko Lviv National University, 50 Dragomanov street, Lviv, 795005, Ukraine |
Аффилиация |
T M Nenchuk; Physics Department, Ivan Franko Lviv National University, 50 Dragomanov street, Lviv, 795005, Ukraine |
Аффилиация |
J M Stakhira; Physics Department, Ivan Franko Lviv National University, 50 Dragomanov street, Lviv, 795005, Ukraine |
Выпуск |
1 |