Zn<sub>0.8</sub>Mg<sub>0.2</sub>O-based metal–semiconductor–metal photodiodes on quartz for visible-blind ultraviolet detection
Liu, K W; Zhang, J Y; Ma, J G; Jiang, D Y; Lu, Y M; Yao, B; Li, B H; Zhao, D X; Zhang, Z Z; Shen, D Z; Liu, K W; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Graduate school of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China; Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China;; Ma, J G; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Jiang, D Y; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Graduate school of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China; Lu, Y M; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Yao, B; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Li, B H; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Zhao, D X; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Zhang, Z Z; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Shen, D Z; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China
Журнал:
Journal of Physics D: Applied Physics
Дата:
2007-05-07
Аннотация:
Zn<sub>0.8</sub>Mg<sub>0.2</sub>O metal–semiconductor–metal ultraviolet photodiodes were fabricated on quartz by radio frequency magnetron sputtering. Dark current, spectral responsivity and pulse response experiments were carried out for the device. The photodetectors showed a peak responsivity at 330 nm. The ultraviolet-visible rejection ratio (R330 nm/R400 nm) was more than four orders of magnitude at 3 V bias. The photodetector showed fast photoresponse with a rise time of 10 ns and a fall time of 170 ns. In addition, the thermally limited detectivity was calculated to be 3.1 × 10<sup>11</sup> cm Hz<sup>1/2</sup> W<sup>−1</sup> at 330 nm.
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