| Автор | Liu, K W |
| Автор | Zhang, J Y |
| Автор | Ma, J G |
| Автор | Jiang, D Y |
| Автор | Lu, Y M |
| Автор | Yao, B |
| Автор | Li, B H |
| Автор | Zhao, D X |
| Автор | Zhang, Z Z |
| Автор | Shen, D Z |
| Дата выпуска | 2007-05-07 |
| dc.description | Zn<sub>0.8</sub>Mg<sub>0.2</sub>O metal–semiconductor–metal ultraviolet photodiodes were fabricated on quartz by radio frequency magnetron sputtering. Dark current, spectral responsivity and pulse response experiments were carried out for the device. The photodetectors showed a peak responsivity at 330 nm. The ultraviolet-visible rejection ratio (R330 nm/R400 nm) was more than four orders of magnitude at 3 V bias. The photodetector showed fast photoresponse with a rise time of 10 ns and a fall time of 170 ns. In addition, the thermally limited detectivity was calculated to be 3.1 × 10<sup>11</sup> cm Hz<sup>1/2</sup> W<sup>−1</sup> at 330 nm. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2007 IOP Publishing Ltd |
| Название | Zn<sub>0.8</sub>Mg<sub>0.2</sub>O-based metal–semiconductor–metal photodiodes on quartz for visible-blind ultraviolet detection |
| Тип | paper |
| DOI | 10.1088/0022-3727/40/9/014 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 40 |
| Первая страница | 2765 |
| Последняя страница | 2768 |
| Последняя страница | 2768 |
| Аффилиация | Liu, K W; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Graduate school of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China |
| Аффилиация | Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; |
| Аффилиация | Ma, J G; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China |
| Аффилиация | Jiang, D Y; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China; Graduate school of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China |
| Аффилиация | Lu, Y M; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China |
| Аффилиация | Yao, B; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China |
| Аффилиация | Li, B H; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China |
| Аффилиация | Zhao, D X; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China |
| Аффилиация | Zhang, Z Z; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China |
| Аффилиация | Shen, D Z; Key Laboratory of Excited State Processes, Changchun Insititute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 People's Republic of China |
| Выпуск | 9 |
