Phase transition of cadmium selenide thin films in MOCVD growth process
Ju, Z G; Lu, Y M; Shan, C X; Zhang, J Y; Yao, B; Shen, D Z; Ju, Z G; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China; Graduate School of the Chinese Academy of Sciences, Beijing 100039, People's Republic of China; Lu, Y M; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China; Shan, C X; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China; Zhang, J Y; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China;; Yao, B; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China; Shen, D Z; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, People's Republic of China
Журнал:
Journal of Physics D: Applied Physics
Дата:
2008-01-07
Аннотация:
Cadmium selenide (CdSe) thin films were fabricated on c-sapphire and GaAs (1 0 0) substrates by low pressure metal organic chemical vapour deposition. The structural properties of these CdSe thin films were investigated by x-ray diffraction and photoluminescence spectroscopy. The effects of growth temperature (T<sub>g</sub>) on the structural phase of the CdSe thin films were discussed. Phase transition of CdSe thin films grown on sapphire substrates from zincblende (ZB) to wurtzite (W) was observed with increasing T<sub>g</sub>, and the transition critical temperature is 440 °C. However, the CdSe films grown on GaAs (1 0 0) keep ZB form in the whole range of T<sub>g</sub> investigated from 300 to 500 °C.
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